Abstract: Ultra-wide-band-gap (UWBG) semiconductors have tremendous potential to advance electronic devices as device performance improves superlinearly with increasing gap. Ambipolar doping, however, has been a major challenge for UWBG materials as dopant ionization energy and charge compensation generally increase with increasing band gap and significantly limit the semiconductor devices that can currently be realized. Rutile germanium oxide (r-GeO2) is a promising UWBG (4.68 eV) material, yet has not been explored for semiconducting applications. Using hybrid density functional theory, we demonstrate r-GeO2 to be an alternative UWBG material that can be ambipolarly doped.
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