Broadly, our research focuses on the epitaxial growth of complex oxide thin films and heterostructures in the pursuit to uncover, understand, and engineer new electronic phenomena and to push the frontier of technology with next generation devices based on these materials. The complex oxides offer an extremely wide range of properties not observed in conventional compound semiconductors and, thus, are an exciting playground for investigating or tailoring exotic phenomena and exploiting the unusual behavior in devices. Particular interest resides in interface, spin, structure, and charge effects that occur in layered structures with ferroic (and antiferroic) materials, such as (anti)ferromagnets, (anti)ferroelectrics, and multiferroics.
Some specific topics:
Next generation multiferroic hybrid devices
We have recently grown a composite multiferroic system that can efficiently switch a magnetization using a small electric field applied to the ferroelectric layer. We believe that this can be hybridized with spin-based phenomena observed in metal systems to enable ultra-low power dissipation in next generation memory and logic devices.
Entropy stabilized oxide materials
So-called entropy-stabilized oxides emerge due to a large configurational entropy from multi-cation disorder as opposed to the cohesive energy. As the cohesive energy imposes strict solubility limits, entropic stabilization enables the synthesis and exploration of oxide materials with compositions that have been considered to be unfeasible. We are examining the relationship between cationic and structural disorder and the electromagnetic properties of these materials.
Spin based phenomena in unexplored oxide materials
We are exploring new materials for spin based properties that can enable new functionalities in devices. We are particularly focused on antiferromagnetic materials with non-collinear spin structure and materials with unique phase transitions between antiferromagnetic orders.