New Publication! Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility

Abstract: BAs is a III–V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investigate the properties of BAs heterostructures, such as strain effects on band alignments and carrier mobility, considering BAs as both a thin film and a substrate for lattice-matched materials. The […]