New Publication:! “Rutile GeO2: An ultrawide-band-gap semiconductor with ambipolar doping”

New Publication! S. Chae, , J. Lee, K. A. Mengle, J. T. Heron, and E. Kioupakis Appl. Phys. Lett. 114, 102104 (2019) Abstract: Ultra-wide-band-gap (UWBG) semiconductors have tremendous potential to advance electronic devices as device performance improves superlinearly with the increasing gap. Ambipolar doping, however, has been a major challenge for UWBG materials as dopant ionization energy and charge compensation […]