Congratulations to Sieun for passing her candidacy exam on September 4th.
Doping is an essential step in semiconductor technology to achieve the desired type and level of electrical conductivity. Thus, predicting both n-type or p-type dopability of a material is a prerequisite to exploit the material for electronic application. First-principles calculations are a powerful tool to understand point-defect properties since experimental studies to identify and characterize defects at the atomic scale are challenging. To predict n-type and p-type dopability of an unexplored wide bandgap material, we investigated the thermal stability and charge state of various intentional dopants, the issues regarding carrier localization, and charge compensation from native defects.