Once a year, Intel presents an award acknowledging work that makes “a significant impact on future technology” and “celebrates exceptional achievements made through Intel sponcered research.” John T. Heron is among the 10 researchers who have recieved this distinguished award.
“The research team demonstrated ultrafast switching of La-doped BiFeO3 ferroelectric capacitors, developed novel metrologies to measure polarization dynamics at nanoscale, demonstrated modeling frameworks to understand the effect of key physical processes such as domain nucleation, growth, and circuit limits on the switching process, and determined a new regime of energy-delay scaling behavior relevant for computing technologies. Furthermore, the researchers developed novel materials critical for accelerating magneto-electric spin-orbit (MESO) device development to deliver target specifications, such as high entropy perovskite oxides with large spin Hall efficiency and resistivity as well as double perovskite ferromagnet layers epitaxially compatible with La-doped BiFeO3.”
Congratulations to both John and the remainder of the research team who supported this achievement! Read more on Intel’s website if you are interested about this achievement.