Ferroelectronics Lab

Understanding and utilizing non-volatile properties of materials

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New Publication! “A Narrowband Spintronic Terahertz Emitter Based on Magnetoelastic Heterostructures”

October 8, 2021 By Matt Webb

Abstract:

Narrowband terahertz (THz) radiation is crucial for high-resolution spectral identification, but a narrowband THz source driven by a femtosecond (fs) laser has remained scarce. Here, it is computationally predicted that a metal/dielectric/magnetoelastic heterostructure enables converting a fs laser pulse into a multicycle THz pulse with a narrow linewidth down to ∼1.5 GHz, which is in contrast to the single-cycle, broadband THz pulse from the existing fs-laser-excited emitters. It is shown that such narrowband THz pulse originates from the excitation and long-distance transport of THz spin waves in the magnetoelastic film, which can be enabled by a short strain pulse obtained from fs laser irradiation of the metal film when the thicknesses of the metal and magnetoelastic films both fall into a specific range. These results therefore reveal an approach to achieving optical generation of narrowband THz pulse based on heterostructure design, which also has implications in the design of THz magnonic devices.

Full text available from ACS Publications

Filed Under: Publications

Steve defends his PhD dissertation! Congratulations Steve!

September 22, 2021 By Matt Webb

On September 13th, Steve gave a great defense of his PhD dissertation, titled “Composite Spin Hall
Conductivity from Non-collinear Antiferromagnetic Order
“. Congratulations Steve! The Ferroelectronics Lab wishes you the very best luck in your future work!

Filed Under: Graduate Student Progress

New Publication! “Switching with ions”

September 2, 2021 By Matt Webb

Abstract:

“Solid-state hydrogen gating of a ferrimagnetic metal enables independent reversal of Néel and magnetization vectors by an electric field.”

Full text available from: Nature Nanotechnology

Filed Under: Publications

New Publication! “Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High-Entropy Oxides”

September 2, 2021 By Matt Webb

Abstract:

“Memristors have emerged as transformative devices to enable neuromorphic and in-memory computing, where success requires the identification and development of materials that can overcome challenges in retention and device variability. Here, high-entropy oxide composed of Zr, Hf, Nb, Ta, Mo, and W oxides is first demonstrated as a switching material for valence change memory. This multielement oxide material provides uniform distribution and higher concentration of oxygen vacancies, limiting the stochastic behavior in resistive switching. (Zr, Hf, Nb, Ta, Mo, W) high-entropy-oxide-based memristors manifest the “cocktail effect,” exhibiting comparable retention with HfO2– or Ta2O5-based memristors while also demonstrating the gradual conductance modulation observed in WO3-based memristors. The electrical characterization of these high-entropy-oxide-based memristors demonstrates forming-free operation, low device and cycle variability, gradual conductance modulation, 6-bit operation, and long retention which are promising for neuromorphic applications.”

Full text available from: Advanced Electronic Materials

Filed Under: Publications

Nguyen defends her PhD dissertation! Congratulations Nguyen!

August 11, 2021 By Matt Webb

Today, Nguyen gave a great defense of her PhD dissertation, titled “Strain engineering of perpendicular magnetic insulators for magnetoelectronics“. Congratulations Nguyen! The Ferroelectronics Lab wishes you the very best luck in your future work!

Filed Under: Graduate Student Progress

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News

  • New Publication! “Engineering antiferromagnetic magnon bands through interlayer spin pumping” March 28, 2025
  • New Publication! “Polydopamine-Assisted Electroless Deposition of Magnetic Functional Coatings for 3D-Printed Microrobots” January 31, 2025
  • New Publication! “Geometric effects in the measurement of the remanent ferroelectric polarization at the nanoscale”  January 14, 2025

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About

Our research is at the intersection of multiple disciplines, drawing on principles and methodologies from materials science, chemistry, physics, and electrical engineering. Our mission is to pioneer … Read More

News

New Publication! “Engineering antiferromagnetic magnon bands through interlayer spin pumping”

March 28, 2025 By Avery-Ryan Ansbro

New Publication! “Polydopamine-Assisted Electroless Deposition of Magnetic Functional Coatings for 3D-Printed Microrobots”

January 31, 2025 By Avery-Ryan Ansbro

Contact

Ferroelectronics Lab
Address: 2030 H.H. Dow

T: (734) 763-6914
E: [email protected]
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