ABSTRACT

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials’ limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO₂ (r-GeO₂), a water-insoluble GeO₂ polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga₂O₃. The subsequent realization of single-crystalline r-GeO₂ thin films by molecular beam epitaxy provides the opportunity to realize r-GeO₂ for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties.

Full text available from Applied Physics Letters 

We report on the demonstration of ferroelectricity in Sc_xAl_1-xN grown by molecular beam epitaxy on GaN templates. Distinct polarization switching is unambiguously observed for ScxAl1-xN films with Sc contents in the range of 0.14–0.36. Sc_0.20Al_0.80N, which is nearly lattice- matched with GaN, exhibiting a coercive field of ~ 4.2 MV/cm at 10 kHz and a remnant polarization of ~ 135 uC/cm2. After electrical poling, Sc_0.20Al_0.80N presents a polarization retention time beyond 10⁵ s. No obvious fatigue behavior can be found with up to 3 x 10⁵ switching cycles. The work reported here is more than a technical achievement. The realization of ferroelectric single-crystalline III–V semiconductors by molecular beam epitaxy promises a thickness scaling into the nanometer regime and makes it possible to integrate high-performance fer- roelectric functionality with well-established semiconductor platforms for a broad range of electronic, optoelectronic, and photonic device applications.

Full text available from Applied Physics Letters

Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare- earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe1−xGax alloys are amongst the highest performing rare-earth-free magnetostrictive materials; however, magnetostriction becomes sharply suppressed beyond x = 19% due to the formation of a parasitic ordered intermetallic phase. Here, we harness epitaxy to extend the stability of the BCC Fe1−xGax alloy to gallium compositions as high as x = 30% and in so doing dramatically boost the magnetostriction by as much as 10x relative to the bulk and 2x larger than canonical rare-earth based magnetostrictors. A Fe1−xGax − [Pb (Mg1/3Nb2/3)O3]0.7−[PbTiO3]0.3 (PMN-PT) composite magnetoelectric shows robust 90° electrical switching of magnetic anisotropy and a converse magnetoelectric coefficient of 2.0 × 10−5 s m−1. When optimally scaled, this high coefficient implies stable switching at ~80 aJ per bit.

Full text available from Nat Commun

Additionally see the report from The Michigan Engineering News Center ‘Harnessing the hum‘ and the report in Popular Science ‘How shape-shifting magnets could help build a lower-emission computer‘