Our recent publication written by Yi Liang “Ferroelectric Dynamic-Field-Driven Nucleation and Growth Model for Predictive Materials-To-Circuit Co-Design,” has caught the attention of the University news. Highlighted on the University Engineering website and on TechXplore, the development of a dynamic-field-driven nucleation and growth (DFNG) model allows for the prediction of ferroelectric behavior under real-world, complex voltages. This bridges the longstanding gap between fundamental switching physics and practical device engineering. Congratulations to Yi and her collaborators on this achievement.

Read the article at University of Michigan Engineering News or TechXplore or look at the publication directly at Advanced Materials