Ferroelectronics Lab

Understanding and utilizing non-volatile properties of materials

Our Research in the News: Beyond transistor limits: Hybrid magnetic-sound waves could boost computing speed and efficiency

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The Ferroelectronics Lab finds itself in the news once again thanks to a collaborative project funded by the Defense Advanced Research Projects Agency (DARPA), which offers a $6 million budget. In this DARPA “fast and curious” project, we are working together with Dr. Roozbeh Tabrizian, Dr. Wei Lu, both professors here at the University of Michigan, and Dr. Jiamian Hu, a professor at the University of Wisconsin-Madison to develop a novel magnetoacoustic device. If successful, “new devices made of combined ferroelectric and ferromagnetic materials (magnetoelectric multiferroics) could radically improve the speed and energy efficiency of computer processors and also add memory capability.” In our lab, specifically Pat Kezer and Avery Ansbro are contributing to this project.

See the Michigan Engineering newsletter here to learn more about this project.

New Publication! “Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies”

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Abstract: Electrical measurements of ferroelectric switching kinetics are widely used to probe the dynamics of polarization reversal, yet the influence of the measurement circuit is often underappreciated. In this paper, we show that the interplay between ferroelectric capacitors and circuit elements produces distorted, time-dependent voltage waveforms across the device, particularly in the sub-ns regime. We examine how these circuit contributions affect polarization transients extracted from PUND measurements. The resulting distortions scale with supply voltage, capacitor dimensions, and lumped circuit elements, but are not accounted for in conventional experimental analyses or analytical model fitting. We then critically assess existing nucleation and growth models and show that neglecting the time-varying voltage profile can lead to unphysical interpretations of switching kinetics, most notably in the extracted growth dimensionality represented by the Avrami exponent. Finally, we outline guidelines for future studies, emphasizing the need for direct voltage monitoring and circuit-aware de-embedding, as well as modeling frameworks that incorporate voltage-dependent nucleation and growth rates based on intrinsic material parameters.

Read more at Advanced Functional Materials

Advanced Science Showcases Work on Their Cover Page

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“Chemically-Disordered Transparent Conductive Perovskites With High Crystalline Fidelity,” a publication from July 2025 with strong contributions from Pat Keezer, gains attention this month. A graphical abstract artistically describing the work was used on the cover of volume 12, issue 42 of Advanced Science.

“A pulsed laser generates a high-energy plasma plume that quenches and kinetically arrests a high-symmetry, high-entropy, chemically disordered perovskite thin film on a substrate, yielding a material that is simultaneously conductive and transparent. This cover highlights the power of pulsed laser deposition and fast quenching to realize such phases with high crystalline fidelity.” See Advanced Science for more information.

Orignial Abstract: This manuscript presents a working model linking chemical disorder and transport properties in correlated-electron perovskites with high-entropy formulations and a framework to actively design them. This work demonstrates this new learning in epitaxial Srx(Ti,Cr,Nb,Mo,W)O3 thin films that exhibit exceptional crystalline fidelity despite a diverse chemical formulation where most B-site species are highly misfit with respect to valence and radius. X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy confirm a unique combination of chemical disorder and structural perfection in thin and thick epitaxial layers. This combination produces an optical transparency window that surpasses that of the constituent end-members in the UV and IR, while maintaining relatively low electrical resistivity. This work addresses the computational challenges of modeling such systems and investigate short-range ordering using cluster expansion. These results showcase that unusual d-metal combinations access an expanded property design space that is predictable using end-member characteristics and their interactions – though unavailable to them – thus offering performance advances in optical, high-frequency, spintronic, and quantum devices.

Read more at Advanced Science

New Publication! Sub-100 Ω/□ sheet resistance of GaN HEMT with ScAlN barrier

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Abstract: A low sheet resistance of 95.5 Ω/□ at room temperature has been demonstrated in an MBE-grown Sc0.15Al0.85N/AlN/GaN epitaxial HEMT structure. Owing to the strong spontaneous and piezoelectric polarization of ScAlN, a large two-dimensional electron gas density of 7.8 × 1013 cm−2 and a relatively high mobility of 836 cm2/V·s were demonstrated with a 15 nm Sc0.15Al0.85N barrier. Further investigation under low temperature on this structure reveals a reduced sheet resistance to 33.3 Ω/□ and mobility increased to 4223 cm2/V·s at 10 K. The dependence of sheet carrier density, mobility, and the associated sheet resistance on ScAlN thickness was further studied. The compelling electron transport properties demonstrated in the structure position ScAlN as a strong contender as the barrier layer in future GaN HEMT devices.

Read more at Applied Physics Letters

New Publication! “Chemically-Disordered Transparent Conductive Perovskites With High Crystalline Fidelity”

By

Abstract: This manuscript presents a working model linking chemical disorder and transport properties in correlated-electron perovskites with high-entropy formulations and a framework to actively design them. This work demonstrates this new learning in epitaxial Srx(Ti,Cr,Nb,Mo,W)O3 thin films that exhibit exceptional crystalline fidelity despite a diverse chemical formulation where most B-site species are highly misfit with respect to valence and radius. X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy confirm a unique combination of chemical disorder and structural perfection in thin and thick epitaxial layers. This combination produces an optical transparency window that surpasses that of the constituent end-members in the UV and IR, while maintaining relatively low electrical resistivity. This work addresses the computational challenges of modeling such systems and investigate short-range ordering using cluster expansion. These results showcase that unusual d-metal combinations access an expanded property design space that is predictable using end-member characteristics and their interactions– though unavailable to them– thus offering performance advances in optical, high-frequency, spintronic, and quantum devices.

Read more at Advanced Science

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Our research is at the intersection of multiple disciplines, drawing on principles and methodologies from materials science, chemistry, physics, and electrical engineering. Our mission is to pioneer … Read More

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Ferroelectronics Lab
Address: 2030 H.H. Dow

T: (734) 763-6914
E: jtheron@umich.edu