Ferroelectronics Lab

Understanding and utilizing non-volatile properties of materials

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New Publication! “Perspective: Entropy-Stabilized Oxide Memristors”

August 15, 2024 By Avery-Ryan Ansbro

Abstract: A memristor array has emerged as a potential computing hardware for artificial intelligence (AI). It has an inherent memory effect that allows information storage in the form of easily programmable electrical conductance, making it suitable for efficient data processing without shuttling of data between the processor and memory. To realize its full potential for AI applications, fine-tuning of internal device dynamics is required to implement a network system that employs dynamic functions. Here, we provide a perspective on multicationic entropy-stabilized oxides as a widely tunable materials system for memristor applications. We highlight the potential for efficient data processing in machine learning tasks enabled by the implementation of “task specific” neural networks that derive from this material tunability.

Full text available from Applied Physics Letters

Filed Under: Publications Tagged With: device, high entropy, memristor, Sieun Chae

New publication! “Efficient Data Processing Using Tunable Entropy-Stabilized Oxide Memristors“

May 21, 2024 By Avery-Ryan Ansbro

Abstract: Memristive devices are of potential use in a range of computing applications. However, many of these devices are based on amorphous materials, where systematic control of the switching dynamics is challenging. Here we report tunable and stable memristors based on an entropy-stabilized oxide. We use single-crystalline (Mg,Co,Ni,Cu,Zn)O films grown on an epitaxial bottom electrode. By adjusting the magnesium composition (XMg = 0.11–0.27) of the entropy-stabilized oxide films, a range of internal time constants (159–278 ns) for the switching process can be obtained. We use the memristors to create a reservoir computing network that classifies time-series input data and show that the reservoir computing system, which has tunable reservoirs, offers better classification accuracy and energy efficiency than previous reservoir system implementations.

Full text available from Nature Electronics

Filed Under: Publications Tagged With: high entropy, Matt Webb, memristor, Sieun Chae, Tony Chiang

New Publication! “Germanium dioxide: A new rutile substrate for epitaxial film growth”

September 1, 2022 By Matt Webb

Abstract: Rutile compounds have exotic functional properties that can be applied for various electronic applications; however, the limited availability of epitaxial substrates has restricted the study of rutile thin films to a limited range of lattice parameters. Here, rutile GeO2 is demonstrated as a new rutile substrate with lattice parameters of 𝑎=4.398 Å and 𝑐=2.863 Å. Rutile GeO2 single crystals up to 4 mm in size are grown by the flux method. X-ray diffraction reveals high crystallinity with a rocking curve having a full width half-maximum of 0.0572°. After mechanical polishing, a surface roughness of less than 0.1 nm was obtained, and reflection high-energy electron diffraction shows a crystalline surface. Finally, epitaxial growth of (110)-oriented TiO2 thin films on GeO2 substrates was demonstrated using molecular beam epitaxy. Templated by rutile GeO2 substrates, our findings open the possibility of stabilizing new rutile thin films and strain states for the tuning of physical properties.

Full text available from Journal of Vacuum Science & Technology A

Filed Under: Publications Tagged With: Sieun Chae, Synthesis, thin film

Sieun defends her PhD dissertation! Congratulations Sieun!

May 10, 2022 By Matt Webb

On May 5th, Sieun gave a great defense of her PhD dissertation, titled “Theoretical discovery and experimental synthesis of ultra-wide-band-gap semiconductors for power electronics“. Congratulations Sieun! The Ferroelectronics Lab wishes you the very best luck in your future work!

Filed Under: Graduate Student Progress Tagged With: dissertation, Graduation, Sieun Chae

New Publication! “Effects of local compositional and structural disorder on vacancy formation in entropy-stabilized oxides from first-principles”

April 29, 2022 By Matt Webb

Abstract: Entropic stabilization has evolved into a strategy to create new oxide materials and realize novel functional properties engineered through the alloy composition. Achieving an atomistic understanding of these properties to enable their design, however, has been challenging due to the local compositional and structural disorder that underlies their fundamental structure-property relationships. Here, we combine high-throughput atomistic calculations and linear regression algorithms to investigate the role of local configurational and structural disorder on the thermodynamics of vacancy formation in (MgCoNiCuZn)O-based entropy-stabilized oxides (ESOs) and their influence on the electrical properties. We find that the cation-vacancy formation energies decrease with increasing local tensile strain caused by the deviation of the bond lengths in ESOs from the equilibrium bond length in the binary oxides. The oxygen-vacancy formation strongly depends on structural distortions associated with the local configuration of chemical species. Vacancies in ESOs exhibit deep thermodynamic transition levels that inhibit electrical conduction. By applying the charge-neutrality condition, we determine that the equilibrium concentrations of both oxygen and cation vacancies increase with increasing Cu mole fraction. Our results demonstrate that tuning the local chemistry and associated structural distortions by varying alloy composition acts an engineering principle that enables controlled defect formation in multi-component alloys.

Full text available from npj computational materials

Filed Under: Publications Tagged With: high entropy, Sieun Chae, Theory

News

  • New Publication! “Engineering antiferromagnetic magnon bands through interlayer spin pumping” March 28, 2025
  • New Publication! “Polydopamine-Assisted Electroless Deposition of Magnetic Functional Coatings for 3D-Printed Microrobots” January 31, 2025
  • New Publication! “Geometric effects in the measurement of the remanent ferroelectric polarization at the nanoscale”  January 14, 2025

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About

Our research is at the intersection of multiple disciplines, drawing on principles and methodologies from materials science, chemistry, physics, and electrical engineering. Our mission is to pioneer … Read More

News

New Publication! “Engineering antiferromagnetic magnon bands through interlayer spin pumping”

March 28, 2025 By Avery-Ryan Ansbro

New Publication! “Polydopamine-Assisted Electroless Deposition of Magnetic Functional Coatings for 3D-Printed Microrobots”

January 31, 2025 By Avery-Ryan Ansbro

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Ferroelectronics Lab
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T: (734) 763-6914
E: jtheron@umich.edu
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