Ferroelectronics Lab

Understanding and utilizing non-volatile properties of materials

New Publication! “Signatures of quantum spin liquid state and unconventional transport in thin film TbInO3”

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Abstract: Quantum spin liquids, where the frustrated magnetic ground state hosts highly entangled spins resisting long-range order to 0 K, are exotic quantum magnets proximate to unconventional superconductivity and candidate platforms for topological quantum computing. Although several quantum spin liquid material candidates have been identified, thin films crucial for device fabrication and further tuning of properties remain elusive. Recently, hexagonal TbInO3 has emerged as a quantum spin liquid candidate which also hosts improper ferroelectricity and exotic high-temperature carrier transport. Here, we synthesize thin films of TbInO3 and characterize their magnetic and electronic properties. Our films present a highly frustrated magnetic ground state without long-range order to 0.4 K, consistent with bulk crystals. We further reveal a rich ferroelectric domain structure and unconventional non-local transport near room temperature, suggesting hexagonal TbInO3 as a promising candidate for realizing exotic magnetic and transport phenomena in epitaxial heterostructures.

Read more at Nature Communications

Tony Chiang Defends His Thesis, Earning a PhD! Congratulations Tony!

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Tony gave his defence today, 8/19/25, on the ““Polarization Evolution Behavior in
Scaled Ferroelectric Capacitors.” Here, he discussed his research which involved the development of ferroelectric capacitors down to 100 nm in lateral dimention. Using these capacitors, he explored three ferroelectric materials to identify their switching kinetics and limits. Here, he identified a circuit limited and material limited behavior regime differentiated by lateral dimention, the latter which is useful for accurately isolating materials properties. He also establishes a criteria for identifying this regime.

Congratulations Tony, great work!

New Publication! “Endotaxial Stabilization of 2D 1T-TaS2 Charge Density Waves via In-Situ Electrical Current Biasing”

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Abstract: 1T-TaS2 is a layered, two-dimensional material which is host to several charge density wave (CDW) states with three distinct phases: an insulating commensurate (C) phase and the metallic nearly-commensurate (NC) and incommensurate (IC) phases [1-3]. CDW phase selection can be achieved via biasing, making 1T-TaS2 an attractive candidate for device applications [4-6]. The insulating C phase, however, only forms below ∼180 K [1, 7] for bulk 1T-TaS2 and even lower for thin flakes [5], leaving the metal-insulator transition unreachable for room temperature devices.

Recent work has shown endotaxial heterostructures of 2H-TaS2/1T-TaS2 can stabilize 2D C-CDW states in the twinned commensurate (tC) phase at room temperature with a single metal-insulator transition at ∼350 K [3, 8], paving the way for devices operable at room temperature. Previously, this phase has been realized by directly heating 1T-TaS2 past its polytype transition for a few minutes and then cooling it back to room temperature [3, 8].

Here, we show that the tC-CDW state can be synthesized electronically via current. Using an in-house built transmission electron microscopy (TEM) biasing holder, we can source current through exfoliated 1T-TaS2 flakes allowing us to drive and observe the polytype conversion in both real and reciprocal space in-situ. For sufficiently thin flakes, a current of around 210 µA/µm2 is enough to switch from the NC phase to the IC phase and back again. Upon sourcing higher currents of around 750 µA/µm2 the normal NC to IC transition is observed before seeing polytype conversion occur. Holding at this current for around 30 seconds longer is enough to stabilize the tC-CDW phase at room temperature. Similarly to the NC-IC transition, we can switch between the tC and IC phases of this new endotaxial structure by sourcing current through the sample. Using in-situ TEM we can correlate a polytype transition and the associated tC-CDW formation through electrical signatures. Further, this conversion is more localized compared to heating the sample in bulk.

In summary, we report current driven stabilization of 2D CDWs in 1T-TaS2 in and characterize the electronic switching of the NC to IC transition via in-situ TEM.

Read more at Microscopy and Microanalysis

New Publication! “Geometric effects in the measurement of the remanent ferroelectric polarization at the nanoscale” 

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Abstract: A resurgence of research on ferroelectric materials has recently occurred due to their potential to enhance the performance of memory and logic. For the design and commercialization of such technologies, it is important to understand the physical behavior of ferroelectrics and the interplay with device size, geometry, and fabrication processes. Here, we report a study of geometric factors that can influence the measurement of the remanent ferroelectric polarization, an important measurement for understanding wakeup, retention, and endurance in ferroelectric technologies. The areal size scaling of W/Hf0.5Zr0.5O2/W capacitors is compared in two typical structures: an island top electrode with a continuous ferroelectric layer and an island top electrode/ferroelectric layer (etched ferroelectric layer). Error in the evaluation of the switched area leads to anomalous scaling trends and increasing apparent remanent polarization as capacitor sizes decrease, most strongly in continuous ferroelectric layer capacitors. Using TEM and electric field simulations, this is attributed to two effects: a processing artifact from ion milling that creates a foot on the top electrode and a fringe electric field penetrating outside of the capacitor area. With the correction of the switching area, the 2Pr for both samples agree (∼32 μC cm−2) and is invariant in the capacitor sizes used (down to 400 nm diameter). Our work demonstrates that the determination of the actual capacitor structure and local electric field is needed to evaluate the intrinsic ferroelectric behavior at the nanoscale.

Read more on Applied Physics Letters

New Publication! “Conductive filament formation in the failure of Hf0.5Zr0.5O2 ferroelectric capacitors” 

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Abstract: Ferroelectric materials provide pathways to higher performance logic and memory technologies, with Hf0.5Zr0.5O2 being the most popular among them. However, critical challenges exist in understanding the material’s failure mechanisms to design long endurance lifetimes. In this work, dielectric failure due to repeated switching cycles, occurring through oxygen vacancy motion and leading to the formation of a conductive filament, is demonstrated. A field modified hopping barrier of ∼150–400 meV is observed, indicating a vacancy charge of 0.4–0.6e markedly different from the charge states predicted in the literature. After failure, the capacitor leakage current is high (∼25 mA) and constant with capacitor area, consistent with filament formation. Conductive atomic force microscopy measurements and field distribution simulations suggest a local failure mechanism consistent with filament formation along the boundary of the island capacitor due to an enhanced electric field.

Full text available at APL Materials

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Ferroelectronics Lab
Address: 2030 H.H. Dow

T: (734) 763-6914
E: jtheron@umich.edu